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RF2362
0
Typical Applications * TDMA/CDMA/FM PCS Tx Amplifier * Low Noise Transmit Driver Amplifier * 2.4GHz WLAN Systems Product Description
The RF2362 is a low noise CDMA/TDMA PA driver amplifier with a very high dynamic range designed for transmit digital PCS applications at 1880MHz. The device functions as an outstanding PA driver amplifier in the transmit chain of digital subscriber units where low transmit noise power is a concern. The IC includes a power down feature that can be used to completely turn off the device. The IC is featured in a standard SOT 5-lead plastic package.
PCS CDMA/TDMA 3V PA DRIVER AMPLIFIER
* General Purpose Amplification * Commercial and Consumer Systems
1.60 + 0.01 0.400
1
0.15 0.05
2.90 + 0.10
0.950
2.80 + 0.20 3 MAX 0 MIN 0.45 + 0.10 0.127
1.44 1.04
Dimensions in mm.
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
Package Style: SOT 5-Lead Package
Features * Low Noise and High Intercept Point * Adjustable Bias Current * Power Down Control * Single 2.5V to 6.0V Power Supply * 150MHz to 2500MHz Operation * Extremely Small SOT23-5 Package
RF IN 1
5 GND2
GND1 2
VPD 3
4 RF OUT
Ordering Information
RF2362 RF2362 PCBA PCS CDMA/TDMA 3V PA Driver Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A5 020607
4-341
RF2362
Absolute Maximum Ratings Parameter
Supply Voltage Input RF Level Operating Ambient Temperature Storage Temperature
Rating
-0.5 to +8.0 +10 -40 to +85 -40 to +150
Unit
VDC dBm C C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
RF Frequency Range
Specification Min. Typ. Max.
150 to 2500
Unit
MHz
Condition
1880MHz Performance
Gain 19 19 19 +24 20.1 20.1 20.1 +25.5 +25.0 +24.5 2.2 2.2 2.2 32 32 32 1.8:1 1.6:1 14.5 14 13.5 2.5 to 6.0 2.8 35 21.5 21.5 21.5 +35 dB dB dB dBm dBm dBm dB dB dB dB dB dB
Output IP3
Noise Figure
2.5 2.5 2.5
Reverse Isolation
Schematic per Evaluation Board, T = 25C, RF=1880MHz, VPD =2.8V VCC =3.5V VCC =3.0V VCC =2.7V VCC =3.5V VCC =3.0V VCC =2.7V VCC =3.5V VCC =3.0V VCC =2.7V VCC =3.5V VCC =3.0V VCC =2.7V Using External LC network used on Evaluation Board VCC =3.5V VCC =3.0V VCC =2.7V T = 25 C
Input VSWR Output VSWR P1dB 14 12.5 11
2.0:1 2.0:1 dBm dBm dBm V V mA
Power Supply
Voltage (VCC) Voltage (VPD) Current Consumption 2.7 2.9 43
29 - Power Down
32 37
38 43 10
mA mA
VCC =3.5V; VPD =2.8 V; VPD + VCC - Current Consumption from VPD is 8.5 mA Typ. @ VPD = 2.8V and 12 mA Max @ VPD =2.9 V VCC =3.0V; VPD =2.7V; VPD + VCC VCC =2.7V; VPD =2.9V; VPD + VCC VCC =3.5V; VPD 0.9V
4-342
Rev A5 020607
RF2362
Pin 1 Function RF IN Description
RF input pin. This pin is DC-coupled and matched to 50 at 1880MHz.
PD
Interface Schematic
RF IN
TO OUTPUT STAGE
2 3
GND1 VPD
Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Power Down for the IC. VPD = 2.8V +/- 0.1V turns on the part. VPD <0.9V turns off the part. External RF bypassing is required. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. Nominal current required for VPD = 2.8V is 8.5 mA typical and 12 mA Max (@VPD =2.9 V). Amplifier Output pin. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. This pin is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane.
PD
4
RF OUT
5
GND2
Rev A5 020607
4-343
RF2362
Application Schematic: ~1880 MHz Operation, Internal Collector Bias
J1 RF IN 10 pF 1 5
2 R1 0 VPD 10 nF 220 pF 3 4 4.7 nH VCC 220 pF 10 nF 1 pF
J2 RF OUT
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1 P1-1 1 2 3 C7 4.7 F C3 4 pF 1 5 VPD GND VCC
J1 RF IN
50 strip
2 R1 0 VPD C1 10 nF C2 220 pF
2362400-
50 strip 3 4 L1 4.7 nH
C4 1 pF
50 strip
J2 RF OUT
VCC C5 220 pF C6 10 nF
4-344
Rev A5 020607
RF2362
Evaluation Board Layout Board Size 1" x 1"
Board Thickness 0.014"; Board Material FR-4
Rev A5 020607
4-345
RF2362
43.0 42.0 41.0 40.0 39.0 38.0
ICC versus VPD (Averaged)
19.80 19.75 19.70 19.65 19.60 19.55 19.50
Gain versus VPD (Averaged)
Gain (dB)
2.7V Icc (mA) 3.0V Icc (mA) 3.3V Icc (mA) 3.6V Icc (mA) 2.7 2.8 2.9 3.0
37.0
ICC (mA)
36.0 35.0 34.0 33.0 32.0 31.0 30.0 29.0 28.0
19.45 19.40 19.35 19.30 19.25 19.20 19.15 19.10 19.05 19.00 2.70 2.80 2.90 3.00 2.7V Gain (dBm) 3.0V Gain (dBm) 3.3V Gain (dBm) 3.6V Gain (dBm)
VPD
VPD
26.5
OIP3 versus VPD (Averaged)
16.0
P1dB versus VPD (Averaged)
26.0
15.5
25.5
15.0
25.0
P1dB (dBm)
2.7V OIP3 (dBm) 3.0V OIP3 (dBm) 3.3V OIP3 (dBm) 3.6V OIP3 (dBm) 2.7 2.8 2.9 3.0
OIP3 (dBm)
14.5
24.5
14.0
24.0
13.5
2.7V P1dB (dBm) 3.0V P1dB (dBm) 3.3V P 1dB (dBm) 3.6V P 1dB (dBm) 2.7 2.8 2.9 3.0
23.5
13.0
VPD
VPD
Noise Figure versus VPD
2.25 2.24 2.23 2.22
Noise Figure (dB)
2.21 2.20 2.19 2.18 2.17 2.16 2.15 2.70 2.80 2.90 3.00 2.7V NF (dB) 3.0V NF (dB) 3.3V NF (dB) 3.6V NF (dB)
VPD
4-346
Rev A5 020607

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